Automated Organization ProfileMicronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People's Republic of China
Micronano Centre, Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, 100081, Beijing, People's Republic of China
Current S-Index
Sum of Dataset Indices for all datasets
Average Dataset Index per Dataset
Average Dataset Index per dataset
Total Datasets
Total datasets in this organization
Average FAIR Score
Average FAIR Score per dataset
Total Citations
Total citations to the organization's datasets
Total Mentions
Total mentions of the organization's datasets
S-Index Interpretation
The S-Index (Sharing Index) is a comprehensive metric that represents the cumulative impact of all your datasets. It is calculated as the sum of Dataset Index scores across all your claimed datasets.
What it means:
- A higher S-index indicates greater overall impact of your datasets relative to typical datasets in their fields of research
- The S-Index grows as you add more datasets or as existing datasets gain more citations and mentions
- It provides a single number to track your research data impact over time
Current S-Index: 5.0 (sum of 2 datasets Dataset Index scores)
More information here.
S-Index Over Time
Cumulative Citations Over Time
Cumulative Mentions Over Time
Datasets
Temperature-induced Lifshitz transitions have been identified in several materials. Their chemical potential shows a substantial shift with changing temperature. The common feature of these materials is the coexistence of electron and hole pockets in the vicinity of the chemical potential. Here, we report the observation of temperature-induced chemical potential shift and Lifshitz transition in a layered type-II Weyl semimetal, TaIrTe4. The reversal of the polarity of the Hall resistivity and thermoelectric power (TEP) as the temperature increases clearly signal an appreciable shift of the chemical potential and change of the Fermi surface. It is corroborated by the improving agreement between the experimental TEP and the one calculated with temperature-dependent chemical potential. The complete disappearance of an electron pocket, consistent with the change of the Fermi surface when the chemical potential moves downwards, provides an evident signature of a temperature-induced Lifshitz transition in TaIrTe4.
Authors
- Jian, Yu ;
- Wu, QuanSheng ;
- Yang, Meng ;
- Feng, Qi ;
- Duan, Junxi ;
- Chen, Dongyun ;
- Wang, Qinsheng ;
- Xiao, Wende ;
- Shi, Youguo ;
- Yazyev, Oleg V. ;
- Yao, Yugui
Temperature-induced Lifshitz transitions have been identified in several materials. Their chemical potential shows a substantial shift with changing temperature. The common feature of these materials is the coexistence of electron and hole pockets in the vicinity of the chemical potential. Here, we report the observation of temperature-induced chemical potential shift and Lifshitz transition in a layered type-II Weyl semimetal, TaIrTe4. The reversal of the polarity of the Hall resistivity and thermoelectric power (TEP) as the temperature increases clearly signal an appreciable shift of the chemical potential and change of the Fermi surface. It is corroborated by the improving agreement between the experimental TEP and the one calculated with temperature-dependent chemical potential. The complete disappearance of an electron pocket, consistent with the change of the Fermi surface when the chemical potential moves downwards, provides an evident signature of a temperature-induced Lifshitz transition in TaIrTe4.
Authors
- Jian, Yu ;
- Wu, QuanSheng ;
- Yang, Meng ;
- Feng, Qi ;
- Duan, Junxi ;
- Chen, Dongyun ;
- Wang, Qinsheng ;
- Xiao, Wende ;
- Shi, Youguo ;
- Yazyev, Oleg V. ;
- Yao, Yugui