Automated Author ProfileNarita, Akimitsu
Max Planck Institute for Polymer Research, 55128 Mainz, GermanyOrganic and Carbon Nanomaterials Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Okinawa, 904-0495 Japan
Narita, Akimitsu
Current S-Index
Sum of Dataset Indices for all datasets
Average Dataset Index per Dataset
Average Dataset Index per dataset
Total Datasets
Total datasets for this author
Average FAIR Score
Average FAIR Score per dataset
Total Citations
Total citations to the author's datasets
Total Mentions
Total mentions of the author's datasets
S-Index Interpretation
The S-Index (Sharing Index) is a comprehensive metric that represents the cumulative impact of all your datasets. It is calculated as the sum of Dataset Index scores across all your claimed datasets.
What it means:
- A higher S-index indicates greater overall impact of your datasets relative to typical datasets in their fields of research
- The S-Index grows as you add more datasets or as existing datasets gain more citations and mentions
- It provides a single number to track your research data impact over time
Current S-Index: 4.5 (sum of 2 datasets Dataset Index scores)
More information here.
S-Index Over Time
Cumulative Citations Over Time
Cumulative Mentions Over Time
Datasets
The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In a recent work we study, the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal bandgap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultrahigh vacuum conditions from Br- and I-substituted precursors. It is shown that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed the integration of 5-AGNRs into devices and the realization of the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs. The record contains data supporting the results presented in the publication
Authors
- Borin Barin, Gabriela ;
- Sun, Qiang ;
- Di Giovannantonio, Marco ;
- Du, Cheng-Zhuo ;
- Wang, Xiao-Ye ;
- Llinas, Juan Pablo ;
- Mutlu, Zafer ;
- Lin, Yuxuan ;
- Wilhelm, Jan ;
- Overbeck, Jan ;
- Daniels, Colin ;
- Lamparski, Michael ;
- Sahabudeen, Hafeesudeen ;
- Perrin, Mickael L. ;
- Urgel, José I. ;
- Mishra, Shantanu ;
- Kinikar, Amogh ;
- Widmer, Roland ;
- Stolz, Samuel ;
- Bommert, Max ;
- Pignedoli, Carlo A. ;
- Feng, Xinliang ;
- Calame, Michel ;
- Müllen, Klaus ;
- Narita, Akimitsu ;
- Meunier, Vincent ;
- Bokor, Jeffrey ;
- Fasel, Roman ;
- Ruffieux, Pascal
The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In a recent work we study, the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal bandgap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultrahigh vacuum conditions from Br- and I-substituted precursors. It is shown that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed the integration of 5-AGNRs into devices and the realization of the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs. The record contains data supporting the results presented in the publication
Authors
- Borin Barin, Gabriela ;
- Sun, Qiang ;
- Di Giovannantonio, Marco ;
- Du, Cheng-Zhuo ;
- Wang, Xiao-Ye ;
- Llinas, Juan Pablo ;
- Mutlu, Zafer ;
- Lin, Yuxuan ;
- Wilhelm, Jan ;
- Overbeck, Jan ;
- Daniels, Colin ;
- Lamparski, Michael ;
- Sahabudeen, Hafeesudeen ;
- Perrin, Mickael L. ;
- Urgel, José I. ;
- Mishra, Shantanu ;
- Kinikar, Amogh ;
- Widmer, Roland ;
- Stolz, Samuel ;
- Bommert, Max ;
- Pignedoli, Carlo A. ;
- Feng, Xinliang ;
- Calame, Michel ;
- Müllen, Klaus ;
- Narita, Akimitsu ;
- Meunier, Vincent ;
- Bokor, Jeffrey ;
- Fasel, Roman ;
- Ruffieux, Pascal