Description
Data regarding the measurement of effective surface recombination velocity (Seff) and fixed charge (Qf) as a function of aSiCx thickness. Data of Capacitance-Voltage (C-V) curves. Data about EELS measurement with Ge, O and Si signals with and without an interface layer of 1 nm a-SiCx.
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Publication Details
DOI
Publisher
CORA.Repositori de Dades de Recerca
Subfield
Atomic and Molecular Physics, and Optics
Field
Physics and Astronomy
Domain
Physical Sciences
Confidence Score
55%
Source
Scholar Data Model
Keywords
EngineeringSurface passivationCrystalline germaniumGermanium crystals -- Electric properties