Materials Data on Ga2SeS by Materials Project

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Description

GaSeGaS is Hittorf-derived structured and crystallizes in the trigonal P-3m1 space group. The structure is two-dimensional and consists of two GaS sheets oriented in the (0, 0, 1) direction and two GaSe sheets oriented in the (0, 0, 1) direction. In each GaS sheet, Ga2+ is bonded in a trigonal non-coplanar geometry to three equivalent S2- atoms. All Ga–S bond lengths are 2.39 Å. S2- is bonded in a trigonal non-coplanar geometry to three equivalent Ga2+ atoms. In each GaSe sheet, Ga2+ is bonded in a distorted trigonal non-coplanar geometry to three equivalent Se2- atoms. All Ga–Se bond lengths are 2.47 Å. Se2- is bonded in a 3-coordinate geometry to three equivalent Ga2+ atoms.

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Metrics

Dataset Index

0.3

FAIR Score

44%

Citations

0

Mentions

0

Metrics Over Time

Publication Details

DOI

Publisher

LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Assigned Domain

Subfield

Electronic, Optical and Magnetic Materials

Field

Materials Science

Domain

Physical Sciences

Confidence Score

55%

Source

Scholar Data Model

Keywords

36 MATERIALS SCIENCEcrystal structureGa2SeSGa-S-Se

Normalization Factors

FT

13.46

CTw

1.00

MTw

1.00